APTM120H140FT1G parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Microchip

Model:

APTM120H140FT1G

Description:

MOSFET 4N-CH 1200V 8A SP1

Stock:

4870

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$12.2

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Parameters

Current at 25 ° C - continuous drain (Id)

Drain source voltage (Vdss)

1200V(1.2kV)

FET Type

4 N channels(H )

FET function

standard

Gate charge (Qg) at different Vgs (maximum)

145nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

3812pF @ 25V

On resistance (maximum) for different Ids and Vgs

1.68 Ω @ 7A,10V

Power - maximum

208W

Vgs (th) (maximum) for different Ids

5V @ 1mA

packing

bulk

series

working temperature

-40°C ~ 150°C(TJ)

Encapsulation/Housing

SP1

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Base installation

Part status

On sale

DataSheet

APTM120H140FT1G（FET, MOSFET）ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory4870,Price reference "real-time change" China/Hongkong。 APTM120H140FT1G package/specs, Download APTM120H140FT1G、Datasheet。